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MA3S795D Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)
Schottky Barrier Diodes (SBD)
MA3S795D, MA3S795E (MA795WA, MA795WK)
Silicon epitaxial planar type
For switching
I Features
• High-density mounting is possible
• Low forward voltage VF , optimum for low voltage rectification:
VF < 0.3 V (at IF = 1 mA)
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• SS-Mini type 3-pin package
0.28±0.05
3
(0.51)
12
0.28±0.05
(0.51)
(0.80) (0.80)
1.60+–00..0035
3°
Unit: mm
0.12+–00..0025
0.60+–00..0035
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Peak forward current Series
IFM
150
mA
Double *ɹ
110
Forward current (DC) Series
IF
Double *ɹ
30
mA
20
Junction temperature
Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
Note) *: Value per chip
EIAJ : SC-89
SSMini3-F2 Package
MA3S795D MA3S795E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2
Marking Symbol
• MA3S795D: M3D • MA3S795E: M3D
Internal Connection
3
3
I Electrical Characteristics Ta = 25°C
1
2
D
1
2
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
30
µA
0.3
V
1
1.5
pF
1
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00063AED
1