MA3S795 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3S795
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80
0.80 ± 0.05
Unit : mm
I Features
• Extra-small SS-mini type 3-pin package, allowing high-density
mounting
• Optimum for low-voltage rectification because of its low forward
rise voltage (V_F) (Low V_F type of MA3X704A)
• Optimum for high-frequency rectification because of its short
reverse recovery time (t_rr)
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
For switching circuits
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
V_R
30
V
V_RM
30
V
I_F
30
mA
I_FM
150
mA
T_j
125
°C
T_stg
−55 to +125
°C
0.44 0.44
0.88
+
−
0.05
0.03
1 : Anode
2 : NC
3 : Cathode
SS-Mini Type Package(3-pin)
Marking Symbol: M2M
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
30
µA
0.3
V
1
V
1.5
pF
1
ns
Detection efficiency
η
V_in = 3 V_(peak), f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : t_rr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_F
t_rr
t
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
1