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| MA3S137 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA3S137
Silicon epitaxial planar type
For high-speed switching circuits
1.60 ± 0.1
0.80
0.80 ± 0.05
Unit : mm
I Features
⢠Super-small SS-mini type package contained two elements, allow-
ing high-density mounting
⢠Two diodes are connected in series in the package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
80
V
Peak reverse voltage
VRM
80
V
Forward current Single
IF
100
mA
(DC)
Series
65
Peak forward
Single
IFM
225
mA
current
Series
145
Non-repetitive peak Single
IFSM
500
mA
forward surge current* Series
325
Junction temperature
Storage temperature
Note) * : t = 1 s
Tj
150
°C
Tstg
â55 to +150
°C
1
3
2
0.44 0.44
0.88
+
â
0.05
0.03
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MS
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
Symbol
IR
VF
VR
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 â¦
Min Typ Max Unit
100 nA
1.2
V
80
V
2
pF
3
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 â¦
1
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