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| MA3S133 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA3S133
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80
0.80 ± 0.05
Unit : mm
I Features
⢠Super-small SS-mini type package contained two elements, allow-
ing high-density mounting
⢠Two diodes are connected in series in the package
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
80
V
Peak reverse voltage
VRM
80
V
Forward current Single
IF
100
mA
(DC)
Series
65
Peak forward
Single
IFM
200
mA
current
Series
130
Junction temperature
Storage temperature
Tj
150
°C
Tstg
â55 to +150
°C
0.44 0.44
+ 0.05
0.88 â 0.03
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MP
Internal Connection
1
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*3
IR
VR = 75 V
VF
IF = 100 mA
VR
IR = 100 µA
Ct*1
VR = 0 V, f = 1 MHz
Ct*2
VR = 0 V, f = 1 MHz
trr*1
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 â¦
trr*2
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 â¦
80
150
9
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 2 and 3
*2 : Between pins 1 and 3
*3 : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 â¦
3
Max
100
1.2
5.5
3.0
Unit
nA
V
V
pF
pF
ns
ns
1
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