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| MA3S132K Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Switching Diodes
MA3S132K
Silicon epitaxial planar type
For switching circuits
Unit : mm
1.60 ± 0.1
0.80
0.80 ± 0.05
I Features
⢠Short reverse recovery time trr
⢠Small terminal capacitance, Ct
⢠Super-small SS-mini type package, allowing high-density mount-
ing
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
VR
80
V
VRM
80
V
IF
100
mA
IFM
225
mA
Non-repetitive peak forward
IFSM
500
mA
surge current*
Junction temperature
Storage temperature
Tj
150
°C
Tstg
â55 to +150
°C
Note) * : t = 1 s
0.44 0.44
0.88
+
â
0.05
0.03
1 : Anode
2 : NC
3 : Cathode
SS-Mini Type Package (3-pin)
Marking Symbol: MI
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
IR
Forward voltage (DC)
VF
Reverse voltage (DC)
VR
Terminal capacitance
Ct
Reverse recovery time*
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 â¦
Min Typ Max Unit
100 nA
1.2
V
80
V
2
pF
3
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
38 W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 â¦
1
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