MA3J745E Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3J745E
Silicon epitaxial planar type
For switching circuits
I Features
• Two elements are contained in the (small S-mini type package),
resulting in allowing high-density mounting
• Optimum for low-voltage rectification because of its low forward
rise voltage (V_F)
• Optimum for high-frequency rectification because of its short
reverse recovery time (t_rr)
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Peak reverse voltage
V_RM
30
V
Forward current Single
I_F
30
mA
(DC)
Double^*
20
Peak forward
Single
I_FM
150
mA
current
Double^*
110
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) * : Value per chip
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
1
3
2
1 : Anode 1
2 : Anode 2
3 : Cathode 1, 2
EIAJ : SC-70
Flat S-Mini Type Package (3-pin)
Marking Symbol: M3D
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
Detection efficiency
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
η
V_in = 3 V_(peak), f = 30 MHz
50
µA
0.3
V
1.0
V
1.5
pF
1.0
ns
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : t_rr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
1