MA3J744 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA3J744
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
Unit : mm
0.425
2.1 ± 0.1
1.25 ± 0.1
0.425
I Features
• Small S-mini type package allowing high-density mounting
• Allowing to rectify under (I_F(AV) = 200 mA) condition
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Average forward current
I_F(AV)
200
mA
Peak forward current
I_FM
300
mA
Non-repetitive peak forward
I_FSM
1
A
surge current^*
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
1 : Anode
2 : NC
3 : Cathode
EIAJ : SC-70
Flat S- Mini Type Package (3-pin)
Marking Symbol: M1M
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
Symbol
I_R
V_F
C_t
t_rr
Conditions
V_R = 30 V
I_F = 200 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
Min Typ Max Unit
50
µA
0.55
V
30
pF
3
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1