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| MA3J700 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Schottky Barrier Diodes (SBD)
MA3J700
Silicon epitaxial planar type
For high-frequency rectification
I Features
⢠S-mini type 3-pin package
⢠Allowing to rectify under (IF(AV) = 500 mA) condition
⢠Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
Unit : mm
0.425
2.1 ± 0.1
1.25 ± 0.1
0.425
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
40
V
Repetitive peak reverse voltage VRRM
40
V
Average forward current
IF(AV)
500
mA
Non-repetitive peak forward
IFSM
2
A
surge current*
Junction temperature
Storage temperature
Tj
125
°C
Tstg
â55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1 : Anode
2 : NC
3 : Cathode
Flat S-Mini Type Package (3-pin)
Marking Symbol: M2W
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VR = 35 V
VF
IF = 500 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 0.1 · IR, RL = 100 â¦
100 µA
0.55
V
60
pF
5
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 400 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 100 mA
IR = 100 mA
RL = 100 â¦
1
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