MA3J143 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Switching Diodes
MA3J143, MA3J143A
Silicon epitaxial planar type
For switching circuits
I Features
• Small S-mini type package contained two elements, allowing high-
density mounting
• Two diodes are connected in series in the package
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
1
3
2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse current ^MA3J143
V_R
40
V
(DC)
MA3J143A
80
Peak reverse
MA3J143
V_RM
40
V
voltage
MA3J143A
80
Forward current Single
I_F
(DC)
Series
100
mA
65
Peak forward
Single
I_FM
200
mA
current
Series
130
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
Flat S-Mini Type Package (3-pin)
Marking Symbol
• MA3J143 : MC • MA3J143A : MP
Internal Connection
1
3
2
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA3J143
I_R
V_R = 40 V
100 nA
MA3J143A
V_R = 80 V
100
Forward voltage (DC)
V_F
I_F = 100 mA
1.2
V
Reverse voltage (DC) MA3J143
V_R
I_R = 100 µA
40
V
MA3J143A
80
Terminal capacitance
Reverse recovery time^*3
C_t1*1
C_t2*2
t_rr1*1
t_rr2*2
V_R = 0 V, f = 1 MHz
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 · I_R, R_L = 100 Ω
5.5
pF
3.0
pF
150
ns
9
ns
Note) *1 : Between pins 2 and 3
*2 : Between pins 1 and 3
*3 : t_rr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 · I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
1