MA3G751 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)

Schottky Barrier Diodes (SBD)
MA3G751, MA3G751A (MA751, MA751A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
I Features
• I_F(AV) = 20 A rectification is possible
• Cathode-common dual type
• Low forward voltage V_F
• TOP-3F-A1 package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak MA3G751
V_RRM
40
V
reverse-voltage MA3G751A
45
Average forward current
I_F(AV)
20
A
Non-repetitive peak forward-
I_FSM
150
A
surge-current ^*
Junction temperature
Storage temperature
T_j
−40 to +125
°C
T_stg
−40 to +125
°C
Note) _*: Half sine wave; 10 ms/cycle
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
1 : Anode
123
2 : Cathode
(common)
3 : Anode
EIAJ : SC-92
TOP-3F-A1 Package
Marking Symbol
• MA3G751 : MA751
• MA3G751A: MA751A
Internal Connection
1
2
3
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA3G751
I_R
MA3G751A
Forward voltage (DC)
V_F
High voltage rectification
R_th(j-c)
Note) Rated input/output frequency: 100 MHz
V_R = 40 V
V_R = 45 V
I_F = 10 A
Smoothed current (between junction and case)
5
mA
5
0.55
V
1.5 °C/W
Publication date: August 2001
Note) The part number in the parenthesis shows conventional part number.
SKH00051AED
1