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| MA3G655 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planar type (cathode common) | |||
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Fast Recovery Diodes (FRD)
MA3G655
Silicon planar type (cathode common)
For switching circuits
I Features
⢠High reverse voltage VR
⢠Low forward voltage VF
⢠Fast reverse recovery time trr
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM
300
V
Non-repetitive peak reverse
VRSM
300
V
surge voltage
Average forward current
IF(AV)
20
A
Non-repetitive peak forward
IFSM
150
A
surge current*
Junction temperature
Storage temperature
Tj
â40 to +150
°C
Tstg
â40 to +150
°C
Note) * : Half sine-wave; 10 ms/cycle
15.0 ± 0.3
11.0 ± 0.2
Ï 3.2 ± 0.1
Unit : mm
5.0 ± 0.2
3.2
2.0 ± 0.2
2.0 ± 0.1
1.1 ± 0.1
0.6 ± 0.2
5.45 ± 0.3
10.9 ± 0.5
123
1 : Anode
2 : Cathode
(Common)
3 : Anode
TOP-3F(a) (TOP-3 Full Pack Package)
Internal Connection
123
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time*
Thermal resistance
IRRM1
IRRM2
VF
trr
Rth(j-c)
Rth(j-a)
VRRM = 300 V, TC = 25°C
VRRM = 300 V, Tj = 150°C
IF = 10 A, TC = 25°C
IF = 1 A, IR = 1 A
Direct current (between junction and case)
20
µA
5
mA
1
V
50
ns
1.5 °C/W
40 °C/W
Note) 1. Rated input/output frequency: 10 MHz
2. * : trr measuring circuit
50 â¦
50 â¦
D.U.T
5.5 â¦
trr
IF
IR
0.1 Ã IR
1
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