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| MA3D799 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common) | |||
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Schottky Barrier Diodes (SBD)
MA3D799
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
I Features
⢠TO-220D package
⢠Allowing to rectify under (IF(AV) = 10 A) condition
⢠Cathode common dual type
⢠Low VF (forward voltage) type: VF < 0.47 V(at IF = 5 A)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM
30
V
Average forward current
IF(AV)
10
A
Non-repetitive peak forward
IFSM
120
A
surge current*
Junction temperature
Storage temperature
Tj
â40 to +125
°C
Tstg
â40 to +125
°C
Note) * : Half sine-wave; 10 ms/cycle
Ï 3.2 ± 0.1
1.4 ± 0.2
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
1 2 3 5.08 ± 0.5
2.6 ± 0.1
0.55 ± 0.15
1 : Anode
2 : Cathode(common)
3 : Anode
TO-220D package
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
IR
VR = 30 V
VF
IF = 5 A
3
mA
0.47
V
High voltage rectification
Rth(j-c)
Direct current (between junction and case)
3 °C/W
Note) Rated input/output frequency: 150 MHz
1
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