MA3D761 Datasheet, PDF(1/2 Page) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)

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MA3D761 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)

Schottky Barrier Diodes (SBD)

MA3D761

Silicon epitaxial planar type (cathode common)

For switching power supply

9.9 Â± 0.3

Unit : mm

4.6 Â± 0.2

2.9 Â± 0.2

I Features

â¢ Low forward rise voltage VF

â¢ TO-220D (Full-pack package) with high dielectric breakdown

voltage > 5.0 kV

â¢ Easy-to-mount, caused by its V cut lead end

I Absolute Maximum Ratings Ta = 25Â°C

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage VRRM

Average forward current

IF(AV)

Non-repetitive peak forward

IFSM

100

surge current*

Junction temperature

Storage temperature

â40 to +125

Â°C

Tstg

â40 to +125

Â°C

Note) * : Half sine-wave; 10 ms/cycle

Ï 3.2 Â± 0.1

1.4 Â± 0.2

1.6 Â± 0.2

0.8 Â± 0.1

2.54 Â± 0.3

1 2 3 5.08 Â± 0.5

2.6 Â± 0.1

0.55 Â± 0.15

1 : Anode

2 : Cathode

(Common)

3 : Anode

TO-220D Package

I Electrical Characteristics Ta = 25Â°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Reverse current (DC)

Forward voltage (DC)

Thermal resistance*

Rth(j-c)

VR = 90 V, TC = 25Â°C

IF = 5 A, TC = 25Â°C

Direct current (between junction and case)

0.85

3 Â°C/W

Note) 1. Rated input/output frequency: 150 MHz

2. * : TC = 25Â°C

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