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MA3D752 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)
Schottky Barrier Diodes (SBD)
MA3D752, MA3D752A
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
I Features
• Low forward rise voltage VF
• TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV
• Easy-to-mount, caused by its V cut lead end
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak MA3D752
VRRM
40
V
reverse voltage MA3D752A
45
Non repetitive peak MA3D752
VRSM
40
V
reverse voltage
MA3D752A
45
Average forward current
IF(AV)
20
A
Non-repetitive peak forward
IFSM
120
A
surge current*
Junction temperature
Storage temperature
Tj
−40 to +125
°C
Tstg
−40 to +125
°C
Note) * : Half sine-wave; 10 ms/cycle
φ 3.2 ± 0.1
1.4 ± 0.2
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
1 2 3 5.08 ± 0.5
2.6 ± 0.1
0.55 ± 0.15
Internal Connection
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
123
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA3D752
IR
MA3D752A
Forward voltage (DC)
Thermal resistance
VF
Rth(j-c)
Note) Rated input/output frequency: 100 MHz
VR = 40 V, TC = 25°C
VR = 45 V, TC = 25°C
IF = 10 A, TC = 25°C
Direct current (between junction and case)
5
mA
5
0.55
V
3 °C/W
1
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