MA3D693 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planar type

Fast Recovery Diodes (FRD)
MA3D693
Silicon planar type
For high-frequency rectification
I Features
• Low forward rise voltage V_F
• Fast reverse recovery time t_rr
• TO-220D (Full-pack package) with high dielectric breakdown
votlage > 5.0 kV
• Easy-to-mount, caused by its V cut lead end
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage V_RRM
400
V
Non-repetitive peak reverse
V_RSM
400
V
surge voltage
Average forward current
I_F(AV)
5
A
Non-repetitive peak forward
I_FSM
45
A
surge current^*
Junction temperature
T_j
−40 to +150
°C
Storage temperature
T_stg
−40 to +150
°C
Note) * : Half sine-wave; 10 ms/cycle
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
φ 3.2 ± 0.1
1.4 ± 0.2
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
1 2 3 _{5.08 ± 0.5}
2.6 ± 0.1
0.55 ± 0.15
Internal Connection
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
123
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time^*
Thermal resistance
I_RRM1
I_RRM2
V_F
t_rr
R_th(j-c)
R_th(j-a)
V_RRM = 400 V, T_C = 25°C
V_RRM = 400 V, T_j = 150°C
I_F = 2.5 A, T_C = 25°C
I_F = 1 A, I_R = 1 A
Direct current (between junction and case)
50
µA
3
mA
1
V
100
ns
3.3 °C/W
62.5 °C/W
Note) 1. Rated input/output frequency: 10 MHz
2. * : t_rr measuring circuit
50 Ω
50 Ω
D.U.T
5.5 Ω
trr
IF
IR
0.1 × IR
1