MA357J Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planer type

Variable Capacitance Diodes
MA357J
Silicon epitaxial planer type
For CATV tuner
s Features
q Large capacity variation ratio
q Small series resistance r_D
MA111
INDICATES
CATHODE
Unit : mm
0.4±0.15
1
2
0.4±0.15
1.7±0.1
2.5±0.2
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Reverse voltage (DC)
Peak reverse voltage
Junction temperature
Storage temperature
* R_L=10kΩ
Symbol
Rating
Unit
V_R
34
V
V_RM *
35
V
T_j
150
˚C
T_stg
– 55 to +150
˚C
1 : Anode
2 : Cathode
S-Mini Type Package (Flat 2-pin)
Marking Symbol : 7K
s Electrical Characteristics (Ta= 25˚C)
Parameter
Reverse current (DC)
Diode capacitance
Capacitance ratio
Diode capacitance deviation
Series resistance
Symbol
IR
CD(0V)*²
CD(2V)
CD(25V)
CD(10V)
CD(17V)
CD(2V)/CD(25V)
∆C
rD*¹
Condition
VR= 30V
VR= 0V, f= 1MHz
VR= 2V, f= 1MHz
VR= 25V, f= 1MHz
VR= 10V, f= 1MHz
VR= 17V, f= 1MHz
C_{D (2V) (10V) (17V) (25V)}
CD= 9pF, f= 470MHz
Note 1. Rated input/output frequency : 470MHz
2. *¹ : rD measurement device : YHP MODEL 4191A RF IMPEDANCE ANALYZER
3. *² : Low Signal Level
min
typ
max
Unit
10
nA
58.0
pF
29.00
34.30
pF
2.53
2.92
pF
6.40
8.32
pF
3.50
4.35
pF
11.0
—
2.0
%
0.54
Ω
s Marking