MA3200W Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planer type

Zener Diodes Composite Elements
MA3200W
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (4-pin)
q Two-element wiring in parallel of MA3200
MA111
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit : mm
0.65±0.15
0.5R
4
1
2
3
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Single IF(AV)
100
mA
Average forward current
Double IF(AV)
75
mA
Instanious forward current
Single
Double
IFRM
IFRM
200
mA
150
mA
Single
Total power dissipation
Double
Ptot*¹
Ptot*¹
150
110
mW
mW
Non-repetitive reverse surge power dissipation PZSM*²
15
W
Junction temperature
Tj
125
˚C
Storage temperature
T_stg
– 55 to + 125
˚C
*¹ With a printed-circuit board
*² t=100µ s, Tj=125˚C
0.1 to 0.3
0.4±0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
s Internal Connection
4
1
3
2
s Electrical Characteristics (Ta= 25˚C)*¹
Parameter
Symbol
Condition
min
typ
max
Unit
Forward voltage
Zener voltage
Operating resistance
VF
VZ*²
RZ
IF=10mA
IZ= 5mA
IZ= 5mA
0.8
0.9
V
17.0
20.0
22.0
V
15
55
Ω
Reverse current
IR
VR= 13V
Temperature coefficient of zener voltage
SZ*³
IZ= 5mA
50
µA
12.4
16.4
18.4 mV/˚C
Terminal capacitance
CD
VR= 0V, f=1MHz
36
60
pF
* ¹ : The V_Z value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* ² : Guaranteeed at 20ms after power application
* ³ : T_j= 25 to 125˚C
s Marking
20W