MA3100W Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planer type

Zener Diodes Composite Elements
MA3100W
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (4-pin)
q Two-element wiring in parallel of MA3100
MA111
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit : mm
0.65±0.15
0.5R
4
1
2
3
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Average forward current ^{Single IF(AV)}
100
mA
Double I_F(AV)
75
mA
Instanious forward current
Single
Double
I_FRM
I_FRM
200
mA
150
mA
Total power dissipation
Single
Double
P_tot*¹
P_tot*¹
150
mW
110
mW
Non-repetitive reverse surge power dissipation P_ZSM*²
15
W
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
– 55 to + 125
˚C
*¹ With a printed-circuit board
*² t=100µ s, Tj=125˚C
0.1 to 0.3
0.4±0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
s Internal Connection
4
1
3
2
s Electrical Characteristics (Ta= 25˚C)*¹
Parameter
Symbol
Condition
min
typ
Forward voltage
Zener voltage
Operating resistance
Reverse current
Temperature coefficient of zener voltage
Terminal capacitance
V_F
V_Z*²
R_ZK
R_Z
I_R1
I_R2
S_Z*³
C_t
I_F=10mA
I_Z= 5mA
I_Z= 0.5mA
I_Z= 5mA
V_R= 7V
V_R= 8.9V
I_Z= 5mA
V_R= 0V, f=1MHz
0.8
9.4
10.0
8
4.5
6.4
70
Note 1. Rated input/output frequency : 5MHz
2. * ¹ : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* ² : Guaranteeed at 20ms after power application
* ³ : Tj= 25 to 125˚C
max
Unit
0.9
V
10.6
V
130
Ω
20
Ω
0.2
µA
60
µA
8.0
mV/˚C
90
pF
s Marking
10W