MA3062W Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon planer type

Zener Diodes Composite Elements
MA3062W
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (4-pin)
q Two-element wiring in parallel of MA3062
MA111
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit : mm
0.65±0.15
0.5R
4
1
2
3
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Single IF(AV)
100
mA
Average forward current
Double IF(AV)
75
mA
Instanious forward current
Single
Double
IFRM
IFRM
200
mA
150
mA
Total power dissipation
Single
Double
Ptot*¹
Ptot*¹
200
mW
150
mW
Non-repetitive reverse surge power dissipation
P_ZSM*²
15
W
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
– 55 to + 125
˚C
*¹ With a printed-circuit board
*² t=100µ s, T_j=150˚C
0.1 to 0.3
0.4±0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
s Internal Connection
4
1
3
2
s Electrical Characteristics (Ta= 25˚C)*¹
Parameter
Forward voltage
Zener voltage
Operating resistance
Reverse current
Temperature coefficient of zener voltage
Terminal capacitance
Symbol
V_F
V_Z*²
R_Z
I_R
S_Z*³
C_D
Condition
I_F=10mA
I_Z= 5mA
I_Z= 5mA
V_R= 4V
I_Z= 5mA
V_R= 0V, f=1MHz
min
typ
0.8
5.8
6.2
6
0.4
2.3
90
Note 1. Rated input/output frequency : 5MHz
2. * ¹ : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* ² : Guaranteeed at 20ms after power application
* ³ : Tj= 25 to 125˚C
max
Unit
0.9
V
6.6
V
20
Ω
3
µA
3.7
mV/˚C
130
pF
s Marking
6.2W