MA3056W Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon planer type

Zener Diodes Composite Elements
MA3056W
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (4-pin)
q Two-element wiring in parallel of MA3056
MA111
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit : mm
0.65±0.15
0.5R
4
1
2
3
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Average forward current ^{Single IF(AV)}
100
mA
Double IF(AV)
75
mA
Instanious forward current
Single
Double
IFRM
IFRM
200
mA
150
mA
Total power dissipation
Single
Double
Ptot*¹
Ptot*¹
200
mW
150
mW
Non-repetitive reverse surge power dissipation PZSM*²
15
W
Junction temperature
Tj
150
˚C
Storage temperature
*¹ With a printed-circuit board
*² t=100µ s, Tj=150˚C
Tstg
– 55 to + 150
˚C
0.1 to 0.3
0.4±0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
s Internal Connection
4
1
3
2
s Electrical Characteristics (Ta= 25˚C)*¹
Parameter
Symbol
Condition
min
Forward voltage
VF
IF=10mA
Zener voltage
VZ*²
IZ= 5mA
5.3
Operating resistance
RZ
IZ= 5mA
Reverse current
Temperature coefficient of zener voltage
IR
SZ*³
VR= 2V
IZ= 5mA
– 2.0
Terminal capacitance
CD
VR= 0V, f=1MHz
Note 1. Rated input/output frequency : 5MHz
2. * ¹ : The V_Z value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* ² : Guaranteeed at 20ms after power application
* ³ : T_j= 25 to 125˚C
240
200
s Marking
160
5.6W
120
typ
max
Unit
0.8
0.9
V
5.6
6.0
V
15
40
Ω
1
µA
1.2
2.5
mV/˚C
95
140
pF
P_tot – Ta
With a printed-circuit board
10mm 10mm
A
K
0.8mm
Copper foil
t=0.035 mm
80
40
0
0
40 80 120 160 200
Ambient temperature Ta (˚C)