MA3047W Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon planer type

Zener Diodes Composite Elements
MA3047W
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (4-pin)
q Two-element wiring in parallel of MA3047
MA111
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit : mm
0.65±0.15
0.5R
4
1
2
3
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Single IF(AV)
100
mA
Average forward current
Double IF(AV)
75
mA
Instanious forward current
Single
Double
IFRM
IFRM
200
mA
150
mA
Single
Total power dissipation
Double
Ptot*¹
Ptot*¹
200
mW
150
mW
Non-repetitive reverse surge power dissipation PZSM*²
15
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
– 55 to + 150
˚C
*¹ With a printed-circuit board
*² t=100µ s, T_j=150˚C
0.1 to 0.3
0.4±0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
s Internal Connection
4
1
3
2
s Electrical Characteristics (Ta= 25˚C)*¹
Parameter
Symbol
Condition
min
typ
Forward voltage
Zener voltage
VF
VZ*²
IF=10mA
IZ= 5mA
0.8
4.4
4.7
Operating resistance
RZ
IZ= 5mA
50
Reverse current
Temperature coefficient of zener voltage
IR
SZ*³
VR= 1V
IZ= 5mA
– 3.5 –1.4
Note 1. Rated input/output frequency : 5MHz
2. * ¹ : The V_Z value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* ² : Guaranteeed at 20ms after power application
* ³ : T_j= 25 to 125˚C
max
Unit
0.9
V
5.0
V
80
Ω
3
µA
0.2
mV/˚C
s Marking
4.7W