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MA2ZV01 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
Variable Capacitance Diodes
MA2ZV01
Silicon epitaxial planar type
For VCO
I Features
• Good linearity and large capacitance-ratio in CD  VR relation
• Small series resistance rD
• S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Junction temperature
Storage temperature
VR
6
V
Tj
150
°C
Tstg
−55 to +150
°C
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1
2.5 ± 0.2
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 7X
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance*
IR
CD(1V)
CD(3V)
CD(1V)/CD(3V)
rD
VR = 6 V
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
CD = 9 pF, f = 470 MHz
10
nA
15.0
17.0 pF
5.0
7.0
pF
2.2

1.0
Ω
Note) 1ɽRated input/output frequency: 470 MHz
ɹ 2ɽ* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1