MA2Z72000L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2Z720
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
■ Features
• Forward current (Average) I_F(AV) = 500 mA rectification is
/ _possible
• High-density mounting is possible
e _{e. ■ Absolute Maximum Ratings Ta = 25°C}
c _{tag Parameter}
Symbol Rating
Unit
n ^d le ^s _{Reverse voltage}
V_R
40
V
a ^{e cyc Maximum peak reverse voltage VRM}
40
V
life _{Forward current (Average)}
I_F(AV)
500
mA
n ^{u uct Non-repetitive peak forward}
I_FSM
2
A
d _{surge current *}
Pro _{Junction temperature}
te ^{tin ur Storage temperature}
T_j
125
°C
T_stg
−55 to +125
°C
ing ^fo _type ^{n. Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)}
1.25±0.1
0.35±0.1
0.7±0.1
1
0 to 0.1
2
0.5±0.1
5˚
0.16^{+–00..016}
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
Marking Symbol: 2L
ain _coedⁿ_{inclueddesmfaoilnlottewennaanncceettiynpueed} ^ttyyppeed _test ^{info.rjmp/aetnio/ ■ Electrical Characteristics T}a ^{= 25°C ± 3°C}
u ^{n in on d t la .co Parameter}
Symbol
Conditions
Min Typ Max Unit
M _is tin ^{la a isc ue ou nic Forward voltage}
on ^{p m d d ntin ab aso Reverse current}
isc ^{ne co RL an Terminal capacitance}
e/D ^{pla dis ing U icon.p Reverse recovery time *}
V_F
I_F = 500 mA
I_R
V_R = 35 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 0.1 _IR, R_L = 100 Ω
0.55 V
100 µA
60
pF
5
ns
D_{anc llow em Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.}
inten ^{it fo w.s 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body}
is ^w and the leakage of current from the operating equipment.
Ma e ^{v ://w} ɹ 3. Absolute frequency of input and output is 400 MHz.
as ttp 4.*: t_rr measurement circuit
Ple ^{h Bias Application Unit (N-50BU)}
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: April 2004
SKH00035BED
1