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MA2Z366 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
Variable Capacitance Diodes
MA2Z366
Silicon epitaxial planar type
For CATV tuner
I Features
• Large capacitance ratio
• Small series resistance rD, resulting in obtaining high perfor-
mance index, Q of a circuit
• S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage*
Forward current (DC)
Junction temperature
Storage temperature
Note) * : RL = 10 kΩ
VR
34
V
VRM
35
V
IF
20
mA
Tj
150
°C
Tstg
−55 to +150
°C
Unit : mm
INDICATES
CATHODE
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1
2.5 ± 0.2
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 6H
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
IR
VR = 30 V
Diode capacitance
CD(2V)
VR = 2 V, f = 1 MHz
27.13
CD(25V)
VR = 25 V, f = 1 MHz
2.60
CD(10V)
VR = 10 V, f = 1 MHz
7.05
CD(17V)
VR = 17 V, f = 1 MHz
3.48
Capacitance ratio
CD(2V)/CD(25V)
10
Diode capacitance deviation
∆C
CD(2V)(10V)(17V)(25V)
Series resistance*
rD
CD = 9 pF, f = 470 MHz
Note) 1ɽRated input/output frequency: 470 MHz
ɹ 2ɽ* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
10
nA
32.15 pF
3.15 pF
9.97 pF
4.74 pF

2.5
%
0.63
Ω
1