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| MA2Z331 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Variable Capacitance Diodes
MA2Z331
Silicon epitaxial planar type
I Features
⢠Small series resistance rD. rD = 0.18 ⦠(typ.)
⢠Good linearity of C â V curve
⢠Small type package, optimum for down-sizing of equipment
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Junction temperature
Storage temperature
VR
12
V
IF
20
mA
Tj
150
°C
Tstg
â55 to +150
°C
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1
2.5 ± 0.2
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 6T
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance*
IR
CD(1V)
CD(2V)
CD(4V)
CD(10V)
CD(1V)/CD(4V)
CD(2V)/CD(10V)
rD
VR = 12 V
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 10 V, f = 1 MHz
CD = 9 pF, f = 470 MHz
10
nA
17.0
20.0 pF
14.0 15.0 16.0 pF
10.0
12.4 pF
5.5 6.0 6.5
pF
1.53 1.6 1.83 
2.25 2.5 2.75 
0.18 0.22
â¦
Note) 1ɽRated input/output frequency: 470 MHz
ɹ 2ɽ* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
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