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| MA2Z077 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Band Switching Diodes
MA2Z077
Silicon epitaxial planar type
For band switching
I Features
⢠Low forward dynamic resistance rf
⢠Less voltage dependence of diode capacitance CD
⢠S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature*
Storage temperature
VR
35
V
IF
100
mA
Topr
â25 to +85
°C
Tstg
â55 to +150
°C
Note) * : Maximum ambient temperature during operation
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1
2.5 ± 0.2
1 : Anode
2 :Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 4B
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance*
IR
VR = 33 V
VF
IF = 100 mA
CD
VR = 6 V, f = 1 MHz
rf
IF = 2 mA, f = 100 MHz
0.01 100 nA
0.92 1
V
0.9 1.2
pF
0.65 0.85
â¦
Note) 1ɽRated input/output frequency: 100 MHz
ɹ 2ɽ* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
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