MA2YD33 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2YD33
Silicon epitaxial planar type
For high frequency rectification
 Features
 Forward current (Average) I_F(AV) = 500 mA rectification is possible
 Small reverse current I_R
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
30
V
Repetitive peak reverse voltage
V_RRM
30
V
Forward current (Average)
I_F(AV)
500
mA
Non-repetitive peak forward surge current ^*
I_FSM
3
A
Junction temperature
T_j
125
°C
Storage temperature
T_stg –55 to +125 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1.6±0.1
1
0.80±0.05
Unit: mm
0 to 0.1
2
0.55±0.1
5°
0.45±0.1
0.16^{+–00..016}
1: Anode
2: Cathode
Marking Symbol: 2V
Mini2-F1 Package
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F1
I_F = 10 mA
V_F2
I_F = 500 mA
0.3 0.4
V
0.5 0.55
Reverse current
I_R
V_R = 30 V
50
µA
Terminal capacitance
C_t
V_R = 0 V, f = 1 MHz
60
pF
Reverse recovery time ^*
t_rr
I_F = I_R = 100 mA, I_rr = 0.1 I_R
R_L = 100 Ω
5
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_F
t_rr
t
I_rr = 0.1 I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: December 2004
SKH00142AED
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