MA2YD26 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2YD26
Silicon epitaxial planar type
For high speed switching
■ Features
• Forward current (Average) I_F(AV) = 800 mA rectification is
possible
• Reverse voltage V_R = 60 V is guaranteed
• Small reverse current IR
• Mini type 2-pin package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
60
V
Maximum peak reverse voltage V_RM
60
V
Forward current (Average) ^*1
I_F(AV)
800
mA
Non-repetitive peak forward
I_FSM
3
A
surge current ^*2
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) _*1: Mounted on a alumina PC board
*2: ^{The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)}
1.6±0.1
1
0.80±0.05
Unit: mm
0 to 0.1
2
0.55±0.1
5˚
0.45±0.1
0.16^{+–00..016}
Marking Symbol: 2Y
1: Anode
2: Cathode
Mini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
V_F
I_F = 800 mA
I_R
V_R = 45 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 0.1 • I_R , R_L = 100 Ω
0.51 0.58
V
100 µA
125
pF
8
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. *: t_rr measuring instrument
Pulse Generator
(PG-10N)
R_s = 50 Ω
Bias Application Unit (N-50BU)
A
Wave Form
Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
Input Pulse
t_r
t_p
t
10%
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 • IR
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: March 2003
SKH00123AED
1