MA2YD23 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2YD23
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I_F(AV) = 1 A rectification is possible
• Low forward voltage V_F
• Small reverse current I_R
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
25
V
Repetitive peak reverse voltage
V_RRM
25
V
Forward current (Average) ^*1
I_F(AV)
1.0
A
Non-repetitive peak forward
I_FSM
3
A
surge current ^*2
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) _*1: Mounted on an alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.6±0.1
1
Unit: mm
0.80±0.05
0 to 0.1
2
0.55±0.1
5˚
0.45±0.1
0.16^{+–00..016}
1 : Anode
2 : Cathode
Marking Symbol: 2W
Mini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
V_F1
I_F = 0.5 A
V_F2
I_F = 1.0 A
I_R1
V_R = 15 V
I_R2
V_R = 20 V
0.42 0.47
V
0.46 0.55
1.5 20.0 µA
2.5 40.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
Publication date: April 2004
SKH00034BED
1