MA2YD17 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2YD17
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Reverse voltage V_R = 100 V is guaranteed
1.6±0.1
1
Unit: mm
0.80±0.05
0 to 0.1
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
100
V
Maximum peak reverse voltage
V_RM
100
V
Forward current (Average)
I_F(AV)
300
mA
Non-repetitive peak forward
I_FSM
1.5
A
surge current ^*
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) _*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2
0.55±0.1
5˚
0.45±0.1
0.16^{+–00..016}
1: Anode
2: Cathode
Marking Symbol: 2T
Mini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
V_F
I_F = 300 mA
I_R
V_R = 100 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 0.1 I_R , R_L = 100 Ω
0.50 0.58
V
200 µA
100
pF
7
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: April 2004
SKH00032BED
1