MA2YD15 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA2YD15
Silicon epitaxial planar type
For high frequency rectification
I Features
• I_F(AV) = 1 A rectification is possible
• Low forward voltage V_F
• Small reverse current I_R
• Mini type 2-pin package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
20
V
Repetitive peak reverse-voltage
V_RRM
25
V
Average forward current ^*1
I_F(AV)
1
A
Non-repetitive peak forward-
I_FSM
3
A
surge-current ^*2
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
Note) *1: Mounted on a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.6±0.1
1
Unit: mm
0.80±0.05
0 to 0.1
2
0.45±0.1
0.55±0.1
5°
0.16^{+–00..016}
1 : Anode
2 : Cathode
Marking Symbol: 2R
Mini2-F1 Package
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
I_R
V_R = 20 V
V_F
I_F = 1 A
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
100 µA
0.45
V
120
pF
10
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. *: t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: August 2001
SKH00031AED
1