MA2X707 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2X707
Silicon epitaxial planar type
For UHF mixer
I Features
• Small forward voltage V_F
• Optimum for UHF mixer because of its large conversion gain
(GC)
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward voltage
Junction temperature
Storage temperature
V_R
5
V
V_F
0.5
V
T_j
125
°C
T_stg
−55 to +125
°C
INDICATES
CATHODE
1
Unit : mm
2
2.7
+
−
0.2
0.1
3.3 ± 0.2
*(3.8 ± 0.2)
5°
5°
*( ): WL type
1 : Anode
2 : Cathode
Mini Type Package (2-pin)
Marking Symbol: 5B
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward current (DC)
Reverse current (DC)
Forward voltage (DC)
Reverse break down voltage (DC)
Terminal capacitance
Conversion gain^*1,2
I_F
I_R
V_F
V_(BR)R
C_t
GC
V_F = 0.5 V
35
100 mA
V_R = 5 V
35
µA
I_F = 2 mA
0.25
V
I_R = 1 mA
5
V
V_R = 0.5 V, f = 1 MHz
0.65 0.85 1.05 pF
R_F = 890 MHz, L_O = 935 MHz, I_F = 45 MHz −7
−5
dB
Static breakdown strength
C = 100 pF, Breakdown judgment
100 200
V
point I_R ≥ 35 µA
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Noise figure is 8.5 dB.
3. Rated input/output frequency: 935 MHz
4. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed.
*2 : Set min. GC = −7 dB. Out-spec products, if any, this specification would be reviewed
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