MA2SV09 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Variable Capacitance Diodes

Variable Capacitance Diodes
MA2SV09
Silicon epitaxial planar type
For VCO
■ Features
• Good linearity and large capacitance-ratio in C_D − V_R relation
• Small series resistance r_D
• SS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Junction temperature
Storage temperature
V_R
6
V
T_j
150
°C
T_stg
−55 to +150
°C
0.27^{+–00..0025}
2
1
0.8±0.1
5˚
Unit: mm
0.13^{+–00..0025}
EIAJ: SC-79
1: Anode
2: Cathode
SSMini2-F2 Package
Marking Symbol: 4A
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Diode capacitance
Capacitance ratio
Series resistance ^*
I_R
C_D(1V)
C_D(3V)
C_D(1V) /C_D(3V)
r_D
V_R = 5 V
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
V_R = 3 V, f = 470 MHz
10
nA
14.9
16.4 pF
8.4
9.2
1.69
1.87 
0.35
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 470 MHz.
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: March 2004
SKD00063BED
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