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MA2SV04_13 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For VCO
This product complies with the RoHS Directive (EU 2002/95/EC).
Variable Capacitance Diodes
MA2SV04
Silicon epitaxial planar type
Unit: mm
For VCO
■ Features
• Good linearity and large capacitance-ratio in CD − VR relation
/ • Small series resistance rD
• SS-Mini type package, allowing downsizing of equipment and
e automatic insertion through the taping package
c tage. ■ Absolute Maximum Ratings Ta = 25°C
n d le s Parameter
Symbol Rating
Unit
yc Reverse voltage
a e lifec Junction temperature
ten tinur Product Storagetemperature
VR
6
V
Tj
150
°C
Tstg
−55 to +150
°C
0.27+–00..0025
2
1
0.8±0.1
5˚
0.13+–00..0025
EIAJ: SC-79
Marking Symbol: 5
1: Anode
2: Cathode
SSMini2 F2 Package
ain coedninclueddesmfaoilnlottewenninaagnnccfoeeuttitynypupeeed ttyyppeed test info.rjmp/aetnio/n. ■ Electrical Characteristics Ta = 25°C ± 3°C
u n in on d t la .co Parameter
Symbol
Conditions
Min Typ Max Unit
M is tin la a isc ue ou nic Reverse current
on p m d d ntin ab aso Diode capacitance
e/Disc plane discoing URLon.pan Series resistance *
IR
CD(1V)
CD(3V)
rD
VR = 5 V
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 3 V, f = 470 MHz
10
nA
10.0
11.1 pF
5.8
6.4
0.35
Ω
D c w ic Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
an llo em 2. Absolute frequency of input and output is 470 MHz.
Mainten Please vihstittpfo://www.s 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: March 2004
SKD00016CED
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