MA2SP02 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For high frequency switch

PIN diodes
MA2SP02
Silicon epitaxial planar type
For high frequency switch
s Features
• Low terminal capacitance: C_t ≤ 0.5 pF
• Low forward dynamic resistance: r_f ≤ 2.0 Ω
• Miniature package and surface mounting type
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Junction temperature
Storage temperature
V_R
60
V
I_F
100
mA
P_D
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
0.80^{+–00..0035}
1
Unit: mm
0.60^{+–00..0035}
0.12^{+–00..0025}
0.01±0.01
2
0.30±0.05
5˚
0^+–00.05
1: Anode
2: Cathode
SSMini2-F1 Package
Marking Symbol: 3P
s Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Forward dynamic resistance
I_R
V_R = 60 V
V_F
I_F = 10 mA
C_t
V_R = 1 V, f = 1 MHz
r_f
I_F = 10 mA, f = 100 MHz
Min Typ Max Unit
100 nA
1.0
V
0.5
pF
2.0
Ω
Publication date: April 2002
SKL00011AED
1