MA2SE01 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD)
MA2SE01
Silicon epitaxial planar type
For mixer
■ Features
• High-frequency wave detection is possible
• Low forward voltage V_F
• Small terminal capacitance C_t
• SS-Mini type 2-pin package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
20
V
Maximum peak reverse voltage V_RM
20
V
Forward current
I_F
35
mA
Peak forward current
I_FM
100
mA
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to +125
°C
0.80^{+–00..0035}
1
Unit: mm
0.60^{+–00..0035}
0.12^{+–00..0025}
0.01±0.01
2
0.30±0.05
5˚
0^+–00.05
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
Marking Symbol: 4L
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
V_F1
I_F = 1 mA
V_F2
I_F = 35 mA
I_R
V_R = 15 V
C_t
V_R = 0 V, f = 1 MHz
r_f
I_F = 5 mA
0.41
V
1.0
V
200 nA
1.2
pF
40
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
Publication date: April 2003
SKH00030BED
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