MA2SD32 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2SD32
Silicon epitaxial planar type
For super high speed switching
■ Features
• I_F(AV) = 200 mA rectification is possible.
• Small reverse current: I_R < 5 µA (at V_R = 30 V)
0.80^{+–00..0035}
1
Unit: mm
0.60^{+–00..0035}
0.12^{+–00..0025}
0.01±0.01
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Forward current (Average)
I_F(AV)
200
mA
Peak forward current
I_FM
300
mA
Non-repetitive peak forward
I_FSM
1
A
surge current ^*
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to +125
°C
Note) _* : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2
0.30±0.05
5˚
Marking Symbol: 8H
0^+–00.05
1: Anode
2: Cathode
SSMini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Forward voltage
Terminal capacitance
Reverse recovery time ^*
I_R1
V_R = 10 V
I_R2
V_R = 30 V
V_F
I_F = 200 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
0.5
µA
5
0.49 0.56
V
25
pF
2
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. _*: t_rr measurement circuit
Pulse Generator
(PG-10N)
R_s = 50 Ω
Bias Application Unit (N-50BU)
A
Wave Form
Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
Input Pulse
t_r
t_p
t
10%
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Publication date: October 2003
SKH00132AED
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1