MA2SD24_13 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For super high speed switching

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD24
Silicon epitaxial planar type
Unit: mm
For super high speed switching
■ Features
• Forward current (Average) I_F(AV) = 200 mA rectification is
/ _possible
• Small reverse current I_R
e _{e. ■ Absolute Maximum Ratings Ta = 25°C}
c _{tag Parameter}
Symbol Rating
Unit
n ^d le ^{s Reverse voltage}
V_R
20
V
yc _{Repetitive peak reverse voltage}
V_RRM
20
V
a ^e lifec ^{Peak forward current}
I_FM
300
mA
ct _{Forward current (Average)}
I_F(AV)
200
mA
n ^{u du Non-repetitive peak forward}
I_FSM
1
A
ro _{surge current *}
te ^{tin ur P Junctiontemperature}
g ^{fo e . Storage temperature}
T_j
125
°C
T_stg
−55 to +125
°C
win ^{typ tion Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)}
0.80^{+–00..0035}
1
0.60^{+–00..0035}
0.12^{+–00..0025}
0.01±0.01
2
0.30±0.05
5˚
0^+–00.05
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
Marking Symbol: 5L
ain _coedⁿ_{inclueddesmfaoilnlotteennaanncceettiynpueed} ^ttyyppeed _test ^{info.rjmp/aen/ ■ Electrical Characteristics T}a ^{= 25°C ± 3°C}
u ^{n in on d t la .co Parameter}
Symbol
Conditions
Min Typ Max Unit
M _is tin ^{la a isc ue ou nic Forward voltage}
on ^{p m d d ntin ab aso Reverse current}
isc ^{ne co RL an Terminal capacitance}
e/D ^{pla dis ing U icon.p Reverse recovery time *}
V_F
I_F = 200 mA
I_R
V_R = 10 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
0.50 0.58
V
0.1 1.0
µA
25
pF
3
ns
Danc llow em Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
ten ^{fo .s 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body}
in isit ^ww and the leakage of current from the operating equipment.
Ma e ^{v ://w 3. Absolute frequency of input and output is 250 MHz.}
as ttp 4. *: t_rr measurement circuit
Ple ^{h Bias Application Unit (N-50BU)}
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: April 2004
SKH00028BED
1