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MA2SD24 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Schottky Barrier Diodes (SBD)
MA2SD24
Silicon epitaxial planar type
For super high speed switching
â Features
⢠Forward current (Average) IF(AV) = 200 mA rectification is
possible
⢠Small reverse current IR
â Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
VR
20
V
Repetitive peak reverse voltage
VRRM
20
V
Peak forward current
IFM
300
mA
Forward current (Average)
IF(AV)
200
mA
Non-repetitive peak forward
IFSM
1
A
surge current *
Junction temperature
Tj
125
°C
Storage temperature
Tstg
â55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.80+â00..0035
1
Unit: mm
0.60+â00..0035
0.12+â00..0025
0.01±0.01
2
0.30±0.05
5Ë
0+â00.05
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
Marking Symbol: 5L
â Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF
IF = 200 mA
IR
VR = 10 V
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 â¦
0.50 0.58 V
0.1 1.0
µA
25
pF
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
Wave Form Analyzer
(SAS-8130)
Ri = 50 â¦
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 â¦
Publication date: April 2004
SKH00028BED
1
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