MA2SD10 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2SD10
Silicon epitaxial planar type
For super-high speed switching circuit
Unit : mm
0.80
0.80 ± 0.05
I Features
• Sealed in the super small SS-mini type 2-pin package
• Allowing to rectify under (I_F(AV) = 200 mA) condition
• Low forward rise voltage V_F
• Allowing high-density mounting
2
1
0.60
0.60
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
20
V
Repetitive peak reverse voltage
V_RRM
20
V
Non-repetitive peak forward
I_FSM
1
A
surge current^*
Peak forward current
I_FM
300
mA
Average forward current
Junction temperature
Storage temperature
I_F(AV)
200
mA
T_j
125
°C
T_stg
−55 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
+ 0.05
1.20 − 0.03
1.60 ± 0.05
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: 2L
Internal Connection
2
1
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
I_R
V_R = 10 V
V_F1
I_F = 5 mA
20
µA
0.27 V
Terminal capacitance
V_F2
I_F = 200 mA
C_t
V_R = 0 V, f = 1 MHz
0.47 V
40
pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of
a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
1