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| MA2S728 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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Schottky Barrier Diodes (SBD)
MA2S728
Silicon epitaxial planar type
For switching circuits
Unit : mm
I Features
⢠Super-small SS-mini type 2-pin package
⢠Allowing high-density mounting
⢠Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
⢠Small temperature coefficient of forward characteristic
⢠Extremely low reverse current IR
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
30
V
VRM
30
V
IFM
150
mA
IF
30
mA
Tj
125
°C
Tstg
â55 to +125
°C
2
1
+ 0.05
1.20 â 0.03
1.60 ± 0.05
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: B
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 â¦
300 nA
0.4
V
1
V
1.5
pF
1
ns
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k⦠, CL = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 â¦
1
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