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MA2S377 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
Variable Capacitance Diodes
MA2S377
Silicon epitaxial planar type
For VCO and TCXO
I Features
• SS-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Junction temperature
Storage temperature
VR
12
V
IF
20
mA
Tj
150
°C
Tstg
−55 to +150
°C
0.15 min.
Unit : mm
0.15 min.
1.3 ± 0.1
1.7 ± 0.1
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: 7
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance*
IR
CD(2V)
CD(10V)
CD(2V)/CD(10V)
rD
VR = 12 V
VR = 2 V, f = 1 MHz
VR = 10 V, f = 1 MHz
VR = 1 V, f = 470 MHz
10
nA
2.80
3.40 pF
1.10
1.50 pF
2.20
2.80 
0.40 0.60
Ω
Note) 1ɽRated input/output frequency: 470 MHz
ɹ 2ɽ* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1