MA2S376 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Variable Capacitance Diodes
MA2S376
Silicon epitaxial planar type
For VCO of a UHF radio
I Features
• Small series resistance r_D
• SS-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Junction temperature
Storage temperature
V_R
6
V
T_j
150
°C
T_stg
−55 to +150
°C
0.15 min.
Unit : mm
0.15 min.
1.3 ± 0.1
1.7 ± 0.1
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: H
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Diode capacitance
Series resistance^*
I_R
C_D(1V)
C_D(3V)
r_D
V_R = 6 V
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
C_D = 9 pF, f = 470 MHz
14.00
6.80
10
nA
16.00 pF
8.90 pF
0.3
Ω
Note) 1ɽRated input/output frequency: 470 MHz
ɹ 2ɽ* : r_f measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1