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MA2S304 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
Variable Capacitance Diodes
MA2S304
Silicon epitaxial planar type
For VCO
I Features
• Good linearity and large capacitance-ratio in CD  VR relation
• Small series resistance rD
• SS-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Junction temperature
Storage temperature
VR
30
V
Tj
150
°C
Tstg
−55 to +150
°C
0.15 min.
Unit : mm
0.15 min.
1.3 ± 0.1
1.7 ± 0.1
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: K
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance*
IR
CD(1V)
CD(4V)
CD(1V)/CD(4V)
rD
VR = 28 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 4 V, f = 100 MHz
10
nA
24.8
29.8 pF
6.0
8.3
pF
3.0

1.0
Ω
Note) 1ɽRated input/output frequency: 100 MHz
ɹ 2ɽ* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1