MA2Q737 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
For high-frequency rectification
I Features
• Forward current (average) I_F(AV): 1.5 A type
• Reverse voltage (DC value) V_R: 30 V
• Allowing automatic insertion with the emboss taping
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V_R
30
V
Repetitive peak reverse voltage V_RRM
30
V
Average forward current^*1
I_F(AV)
1.5
A
Non-repetitive peak forward
I_FSM
60
A
surge current^*2
Junction temperature
T_j
−40 to +125
°C
Storage temperature
T_stg
−40 to +125
°C
Note) *1 : With a printed-circuit board (copper foil area 2.5 mm × 2.5 mm
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
4.4 ± 0.3
Unit : mm
0 to 0.05
2
1
1.2 ± 0.4
+ 0.4
5.0 − 0.1
1.2 ± 0.4
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PC
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F
I_F = 2 A
C_t
V_R = 10 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
1
mA
0.5
V
70
pF
50
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 20 MHz
3. * : t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
1