MA2Q73600L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For high frequency rectification

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2Q736 (MA736)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
■ Features
• Forward current (Average) I_F(AV) = 1 A rectification is possible
/ _{• Reverse voltage VR = 40 V is guaranteed}
• Automatic insertion with the emboss taping is possible
ce _{tage. ■ Absolute Maximum Ratings Ta = 25°C}
n ^d le ^s Parameter
Symbol Rating
Unit
a ^{e cyc Reverse voltage}
V_R
40
V
life Maximum peak reverse voltage V_RRM
40
V
ct _{Forward current (Average)} *1
I_F(AV)
1
A
n ^u _rodu Non-repetitive peak forward
I_FSM
30
A
P surge current ^*2
te ^{tin ur Junctiontemperature}
g ^{fo e .} Storage temperature
T_j
−40 to +125
°C
T_stg
−40 to +125
°C
win ^{typ tion Note)} *1: ^{Mounted on the printed circuit board (glass epoxy board)}
in ^{n follo ance pe ed rma *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)}
2.5±0.3
2
2.15±0.3
1
8˚
0.25^{+–00..015}
1.4±0.2
1 : Anode
2 : Cathode
NMiniP2-J1 Package
Marking Symbol: PB
a _{coed inclueddesmaintteennancettiynued} ^ttyyppe _test ^info.jp/en/ ■ Electrical Characteristics T_a = 25°C ± 3°C
M _is tinu ^{lan ain con ed ut la ic.co Parameter}
Symbol
Conditions
Min Typ Max Unit
p ^m dis tinu ^{bo on Forward voltage}
on ^{d n a as Reverse current}
isc _lane ^{isco URL .pan Terminal capacitance}
e/D ^{p d ing icon Reverse recovery time}
V_F
I_F = 1.0 A
I_R
V_R = 40 V
C_t
V_R = 10 V, f = 1 MHz
t_rr ^*
I_F = I_R = 100 mA
I_rr = 0.1 I_R , R_L = 100 Ω
0.55
V
2
mA
50
pF
30
ns
Dtenanc follow .sem Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
in ^{it w 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body}
is ^w _{and the leakage of current from the operating equipment.}
Ma e ^{v ://w} 3. Absolute frequency of input and output is 20 MHz.
as ttp _{4. *: trr measurement circuit}
Ple ^h _{Bias Application Unit (N-50BU)}
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00019BED
1