MA2Q736 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2Q736 (MA736)
Silicon epitaxial planar type
For high frequency rectification
I Features
• I_F(AV) = 1 A rectification is possible
• V_R = 40 V is guaranteed
• Automatic insertion with the emboss taping is possible
• New Mini-power 2-pin package
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
V_R
40
V
Peak reverse voltage
V_RRM
40
V
Average forward current ^*1
I_F(AV)
1
A
Non-repetitive peak forward-
I_FSM
30
A
surge-current ^*2
Junction temperature
Storage temperature
T_j
−40 to +125
°C
T_stg
−40 to +125
°C
Note) *1: With a printed circuit board (copper foil area 2 mm × 2 mm or
more on both cathode and anode sides)
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2.5±0.3
2
Unit: mm
2.15±0.3
1
8°
0.25^{+–00..015}
1.4±0.2
1 : Anode
2 : Cathode
NMiniP2-J1 Package
Marking Symbol: PB
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
I_R
V_R = 40 V
V_F
I_F = 1 A
C_t
V_R = 10 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
2
mA
0.55
V
50
pF
30
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 2. Rated input/output frequency: 20 MHz
3. *: t_rr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00019AED
1