MA2J732 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2J732 (MA732)
Silicon epitaxial planar type
For switching
For wave detection
I Features
• Low forward voltage V_F, optimum for low voltage rectification
• Low V_F type of MA3X704A (MA704A)
• Optimum for high frequency rectification because of its short re-
verse recovery time (t_rr)
• S-Mini type 2-pin package
1.25±0.1
0.35±0.1
Unit: mm
0.7±0.1
1
0 to 0.1
2
0.5±0.1
5°
0.16^{+–00..016}
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
V_R
30
V
V_RM
30
V
I_FM
150
mA
I_F
30
mA
T_j
125
°C
T_stg
−55 to +125
°C
1 : Anode
2 : Cathode
EIAJ : SC-90A
SMini2-F1 Package
Marking Symbol: 2C
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time ^*
Detection efficiency
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
η
V_in = 3 V_(peak) , f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
30
µA
0.3
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t_rr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
t_r
t_p
10%
t
I_F
t_rr
t
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00016AED
1