MA2J727 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)
MA2J727
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• V_R = 50 V is guaranteed
• I_F(AV) = 200 mA rectification is possible
1.25±0.1
0.35±0.1
0.7±0.1
Unit: mm
1
0 to 0.1
2
0.5±0.1
5˚
0.16^{+–00..016}
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
50
V
Repetitive peak reverse voltage
V_RRM
50
V
Peak forward current
I_FM
300
mA
Forward current (Average)
I_F(AV)
200
mA
Non-repetitive peak forward
I_FSM
1
A
surge current ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Marking Symbol: 2F
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Forward voltage
Terminal capacitance
Reverse recovery time ^*
I_R
V_R = 50 V
V_F1
I_F = 30 mA
V_F2
I_F = 200 mA
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 100 mA
I_rr = 10 mA, R_L = 100 Ω
200 µA
0.36
V
0.55
V
30
pF
3.0
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
ɹ 3. Absolute frequency of input and output is 1 GHz.
4. _*: t_rr measurement circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: October 2003
SKH00136AED
1