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| MA2J116 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Switching Diodes | |||
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Switching Diodes
MA2J116
Silicon epitaxial planar type
For general purpose
Unit : mm
K
A
I Features
⢠Small S-mini type package, allowing high-density mounting
⢠Soft recovery characteristic (trr = 100 ns)
2
1
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Average forward current
Peak forward current
VR
40
V
VRM
40
V
IF(AV)
100
mA
IFM
225
mA
Non-repetitive peak forward
IFSM
500
mA
surge current*
Junction temperature
Storage temperature
Tj
150
°C
Tstg
â55 to +150
°C
Noe) * : t = 1 s
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 1H
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Forward dynamic resistance*1
Reverse recovery time*2
IR1
VR = 15 V
IR2
VR = 40 V
IR3
VR = 35 V, Ta = 100°C
VF
IF = 100 mA
VR
IR = 100 µA
Ct
VR = 6 V, f = 1 MHz
rf
IF = 3 mA, f = 30 MHz
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 â¦
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : YHP 4191A PF IMPEDANCE ANALYZER
*2 : trr measuring circuit
Min Typ Max Unit
5
nA
10
nA
100 µA
1.2
V
35
V
1.0 2.0
pF
3.6
â¦
100
ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
W.F.Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 â¦
1
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